1 case styles IRHD320CW40 to-244 IRHD320CW40 bulletin pd-20037 04/05 features description/ applications absolute maximum ratings hexfred tm ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ultrafast, soft recovery diode v r = 400v v f (typ.) e = 1v i f(av) = 320a q rr (typ.) = 420nc i rrm (typ.) = 8.7a t rr (typ.) = 45ns di (rec)m /dt (typ.) e = 280a/s base common cathode lug terminal anode 1 lug terminal anode 2 hexfred tm diodes are optimized to reduce losses and emi/ rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. v r cathode-to-anode voltage 400 v i f @ t c = 25c continuous forward current 321 a i f @ t c = 100c continuous forward current 160 i fsm single pulse forward current c 1200 e as non-repetitive avalanche energy d 1.4 mj p d @ t c = 25c maximum power dissipation 625 w p d @ t c = 100c maximum power dissipation 250 t j , t stg operating junction and storage temperature range - 55 to 150 c parameters max units c limited by junction temperature d l = 100h, duty cycle limited by max t j e 125c www.irf.com
IRHD320CW40 bulletin pd-20037 04/05 2 www.irf.com v br cathode anode 400 - - v i r = 100a breakdown voltage, v fm max. forward voltage - 1.10 1.35 v i f = 160a - 1.30 1.55 v i f = 320a - 1.00 1.20 v i f = 160a, t j = 125c i rm max. reverse leakage current - 2.0 12 a v r = v r rated - 3.0 16 a t j = 125c, v r = 320v c t junction capacitance - 370 500 pf v r = 200v l s series inductance - 5.0 - nh . electrical characteristics (per leg) @ t j = 25c (unless otherwise specified) parameters min typ max units test conditions from top of terminal hole to mounting plane t rr reverse recovery time - 45 - ns i f = 1.0a, di f /dt = 200a/s, v r = 30v t rr1 - 90 140 t j = 25c t rr2 - 290 440 t j = 125c i rrm1 peak recovery current - 8.7 20 a t j = 25c i rrm2 -1830 t j = 125c q rr1 reverse recovery charge - 420 1100 nc t j = 25c q rr2 - 2600 7000 t j = 125c di (rec)m /d/t1 - 300 - a/s t j = 25c di (rec)m /d/t2 - 280 - t j = 25c dynamic recovery characteristics @ t j = 25c (unless otherwise specified) i f = 160a v r = 200v di f /dt = 200a/s parameters min typ max units test conditions parameters min typ max units t j max. junction temperature range - - - 55 to 150 c t stg max. storage temperature range - - - 55 to 150 r thjc thermal resistance, junction to case per leg - - 0.24 c/w thermal resistance, junction to case per module - - 0.12 k/w r thcs thermal resistance, case to heatsink - 0.10 - wt weight - 68 (2.4) - g (oz) mounting torque (*) 30 (3.4) - 40 (4.6) lbf.in mounting torque center hole 12 (1.4) - 18 (2.1) (n.m) terminal torque 30 (3.4) - 40 4.6) vertical pull - - 80 lbf.in 2 inch lever pull - - 35 thermal - mechanical characteristics (*) mounting surface must be smooth, flat, free or burrs or other protrusions. apply a thin even film or thermal grease to mounting surface. gradually tighten each mounting bolt in 5-10lbf.in steps until desired or maximum torque limits are reached see fig. 1 see fig. 2 see fig. 3 see fig. 5 see fig. 6 see fig. 7 see fig. 8
bulletin pd-20037 04/05 3 IRHD320CW40 www.irf.com fig. 4 - maximum thermal impedance z thjc characteristics, (per leg) fig. 2 - typical reverse current vs. reverse voltage, (per leg) fig. 3 - typical junction capacitance vs. reverse voltage, (per leg) fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 0.1 1 10 100 1000 10000 100000 0 100 200 300 400 r r reverse voltage - v (v) t = 150c reverse current - i (a) t = 125c t = 25c j j j 100 1000 10000 1 10 100 1000 t = 25c j reverse voltage - v (v) r t junction capacitance - c (pf) a 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1 thjc t , rectangular pulse duration (seconds) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 single pulse (thermal resistance) thermal impedance - z (k/w) 2 t 1 t p dm notes: 1. duty factor d = t / t 2. peak t = p x z + t jdmthjc c 2 1
IRHD320CW40 bulletin pd-20037 04/05 4 www.irf.com fig. 7 - typical stored charge vs. di f /dt, (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt, (per leg) fig. 5 - typical reverse recovery vs. di f /dt, (per leg) fig. 6 - typical recovery current vs. di f /dt, (per leg) 0 100 200 300 400 500 100 1000 f di /dt - (a/s) t - (ns) rr v = 200v t = 125c t = 25c r j j i = 200a f i = 70a f i = 160a f 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 70a i = 200a i = 160a v = 200v t = 125c t = 25c r j j f f f 0 2000 4000 6000 100 1000 f di /dt - (a/s) rr q - (nc) i = 70a i = 200a i = 160a v = 200v t = 125c t = 25c r j j f f f 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 160a i = 70a i = 200a v = 200v t = 125c t = 25c r j j f f f
bulletin pd-20037 04/05 5 IRHD320CW40 www.irf.com fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f fig. 9- reverse recovery parameter test circuit reverse recovery circuit di f /dt di f /dt 4. q rr - area under curve defined by t rr and i rrm 5. di (rec) m / dt - peak rate of change of current during t b portion of t rr 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. t rr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current q rr = t rr x i rrm 2
IRHD320CW40 bulletin pd-20037 04/05 6 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 04/05 v (aval) r(rated) i l(pk) v decay time fig. 11 - avalanche test circuit and waveforms current monitor high-speed switch dut rg = 25 ohm + free-wheel diode vd = 50v l = 100h conforms to jedec outline to-244 dimensions in millimeters and (inches) outline table data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
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